AONS66615 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 1.82 EUR |
| 25+ | 1.54 EUR |
| 100+ | 1.23 EUR |
| 250+ | 1.08 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.9 EUR |
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Technische Details AONS66615 Alpha & Omega Semiconductor Inc.
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V.
Weitere Produktangebote AONS66615
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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AONS66615 | Hersteller : Alpha & Omega Semiconductor |
60V N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| AONS66615 | Hersteller : Alpha & Omega Semiconductor |
60V N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| AONS66615 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 85A; Idm: 224A; 31W Drain-source voltage: 60V Drain current: 85A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 39nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 224A Mounting: SMD Case: DFN5x6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AONS66615 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V |
Produkt ist nicht verfügbar |
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| AONS66615 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 85A; Idm: 224A; 31W Drain-source voltage: 60V Drain current: 85A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 39nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 224A Mounting: SMD Case: DFN5x6 |
Produkt ist nicht verfügbar |