AONS66615 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.17 EUR |
| 25+ | 1.83 EUR |
| 100+ | 1.46 EUR |
| 250+ | 1.29 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.07 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
7 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details AONS66615 Alpha & Omega Semiconductor Inc.
Description: N, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 78W (Tc).
Weitere Produktangebote AONS66615
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
AONS66615 | Alpha & Omega Semiconductor Inc. |
Description: NRds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 6.2W (Ta), 78W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONS66615 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 85A; Idm: 224A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 85A Power dissipation: 31W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 39nC Technology: AlphaSGT™ Pulsed drain current: 224A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
AONS66615 | Alpha & Omega Semiconductor |
60V N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONS66615 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Description: N
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONS66615 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 85A; Idm: 224A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Power dissipation: 31W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 39nC
Technology: AlphaSGT™
Pulsed drain current: 224A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 85A; Idm: 224A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Power dissipation: 31W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 39nC
Technology: AlphaSGT™
Pulsed drain current: 224A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONS66615 |
![]() |
Hersteller: Alpha & Omega Semiconductor
60V N-Channel Power MOSFET
60V N-Channel Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

