AONV210A60 ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
600V, A MOS5 TM N-CHANNEL POWER AONV210A60 TAONV210A60
Anzahl je Verpackung: 2 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 22.71 EUR |
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Technische Details AONV210A60 ALPHA&OMEGA
Description: MOSFET N-CH 600V 4.1A/20A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V, Power Dissipation (Max): 8.3W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V.
Weitere Produktangebote AONV210A60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AONV210A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4.1A/20A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AONV210A60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 208W; DFN8x8 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC On-state resistance: 0.21Ω Drain current: 20A Gate-source voltage: ±20V Power dissipation: 208W Pulsed drain current: 80A Drain-source voltage: 600V Kind of package: reel; tape Case: DFN8x8 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONV210A60 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONV210A60 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 208W; DFN8x8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.21Ω
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 208W
Pulsed drain current: 80A
Drain-source voltage: 600V
Kind of package: reel; tape
Case: DFN8x8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 208W; DFN8x8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.21Ω
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 208W
Pulsed drain current: 80A
Drain-source voltage: 600V
Kind of package: reel; tape
Case: DFN8x8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH