AONV210A60 ALPHA&OMEGA
Hersteller: ALPHA&OMEGA600V, A MOS5 TM N-CHANNEL POWER AONV210A60 TAONV210A60
Anzahl je Verpackung: 2 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 23.84 EUR |
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Technische Details AONV210A60 ALPHA&OMEGA
Description: MOSFET N-CH 600V 4.1A/20A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V, Power Dissipation (Max): 8.3W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V.
Weitere Produktangebote AONV210A60
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| AONV210A60 | Hersteller : Alpha & Omega Semiconductor |
N Channel Power Transistor |
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AONV210A60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4.1A/20A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V |
Produkt ist nicht verfügbar |
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AONV210A60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4.1A/20A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V |
Produkt ist nicht verfügbar |