AOSD21313C

AOSD21313C Alpha & Omega Semiconductor Inc.


AOSD21313C.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
6000+0.49 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOSD21313C Alpha & Omega Semiconductor Inc.

Description: MOSFET 2P-CH 30V 5.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote AOSD21313C nach Preis ab 0.60 EUR bis 2.06 EUR

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Preis
AOSD21313C AOSD21313C Hersteller : Alpha & Omega Semiconductor Inc. AOSD21313C.pdf Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.30 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.60 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21313C Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOSD21313C.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; Idm: -23A; 1.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -5.7A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -23A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21313C Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOSD21313C.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; Idm: -23A; 1.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -5.7A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -23A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH