AOSD26313C ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
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Technische Details AOSD26313C ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N/P-CH 30V 7A/5.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote AOSD26313C
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AOSD26313C | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 7A/5.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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AOSD26313C | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |