AOSD26313C ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Kind of transistor: complementary pair
Polarisation: unipolar
Drain-source voltage: -30/30V
Gate charge: 33nC
On-state resistance: 26/55mΩ
Power dissipation: 1.1W
Drain current: 5.4/-4.4A
Kind of channel: enhancement
Gate-source voltage: ±20V
Version: ESD
| Anzahl | Privatkunde |
|---|---|
| 191+ | 0.45 EUR |
| 313+ | 0.27 EUR |
| 353+ | 0.24 EUR |
| 500+ | 0.21 EUR |
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Technische Details AOSD26313C ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N/P-CH 30V 7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote AOSD26313C
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOSD26313C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOSD26313C |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH