AOSD62666E Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.71 EUR |
| 6000+ | 0.70 EUR |
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Technische Details AOSD62666E Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 60V 9.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote AOSD62666E nach Preis ab 0.37 EUR bis 2.83 EUR
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AOSD62666E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2276 Stücke: Lieferzeit 7-14 Tag (e) |
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AOSD62666E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhancement Version: ESD |
auf Bestellung 2276 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSD62666E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 60V 9.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 28088 Stücke: Lieferzeit 10-14 Tag (e) |
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AOSD62666E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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AOSD62666E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |