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AOSD62666E

AOSD62666E Alpha & Omega Semiconductor Inc.

AOSD62666E.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.82 EUR
6000+0.76 EUR
9000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOSD62666E Alpha & Omega Semiconductor Inc.

Description: MOSFET 2N-CH 60V 9.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

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AOSD62666E AOSD62666E ALPHA & OMEGA SEMICONDUCTOR AOSD62666E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD
Version: ESD
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Gate charge: 6.5nC
On-state resistance: 14.5mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
auf Bestellung 1272 Stücke:
Lieferzeit 14-21 Tag (e)
81+1.06 EUR
150+0.57 EUR
173+0.49 EUR
190+0.45 EUR
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E Alpha & Omega Semiconductor Inc. AOSD62666E.pdf Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 27231 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
11+1.94 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E Alpha? Semiconductor AOSD62666E.pdf 2N-канальний ПТ, Udss, В = 60, Id = 9,5 А, Ciss, пФ @ Uds, В = 755 @ 20, Qg, нКл = 10 @ 4,5 В, Rds = 14, 5 мОм @ 9,5A, 10 В, Ugs(th) = 2,2 В @ 250 мкА, Р, Вт = 2,5, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 12 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E.pdf
AOSD62666E
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD
Version: ESD
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Gate charge: 6.5nC
On-state resistance: 14.5mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
auf Bestellung 1272 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
81+1.06 EUR
150+0.57 EUR
173+0.49 EUR
190+0.45 EUR
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E.pdf
AOSD62666E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 27231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
11+1.94 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E.pdf
Hersteller: Alpha? Semiconductor
2N-канальний ПТ, Udss, В = 60, Id = 9,5 А, Ciss, пФ @ Uds, В = 755 @ 20, Qg, нКл = 10 @ 4,5 В, Rds = 14, 5 мОм @ 9,5A, 10 В, Ugs(th) = 2,2 В @ 250 мкА, Р, Вт = 2,5, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 12 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH