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AOSP32368

AOSP32368 Alpha & Omega Semiconductor Inc.

AOSP32368.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOSP32368 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 30V 16A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V.

Weitere Produktangebote AOSP32368 nach Preis ab 0.31 EUR bis 1.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
AOSP32368 AOSP32368 ALPHA & OMEGA SEMICONDUCTOR AOSP32368.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8; ESD
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.5mΩ
Drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
81+1.06 EUR
206+0.42 EUR
233+0.37 EUR
260+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32368 AOSP32368 Alpha & Omega Semiconductor Inc. AOSP32368.pdf Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3122 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
22+0.96 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32368 Alpha? Semiconductor AOSP32368.pdf N-канальний ПТ, Udss, В = 30, Id = 16 А, Ciss, пФ @ Uds, В = 2270 @ 16, Qg, нКл = 60 @ 10 В, Rds = 5,5 мОм @ 16 A, 10 В, Ugs(th) = 2,4 В @ 250 мкА, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Очікується: 2700 Од. в
Anzahl je Verpackung: 3000 Stücke
verfügbar 180 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32368 AOSP32368.pdf
AOSP32368
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8; ESD
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.5mΩ
Drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
81+1.06 EUR
206+0.42 EUR
233+0.37 EUR
260+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32368 AOSP32368.pdf
AOSP32368
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3122 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
22+0.96 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32368 AOSP32368.pdf
Hersteller: Alpha? Semiconductor
N-канальний ПТ, Udss, В = 30, Id = 16 А, Ciss, пФ @ Uds, В = 2270 @ 16, Qg, нКл = 60 @ 10 В, Rds = 5,5 мОм @ 16 A, 10 В, Ugs(th) = 2,4 В @ 250 мкА, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Очікується: 2700 Од. в
Anzahl je Verpackung: 3000 Stücke
verfügbar 180 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH