AOSP32368 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
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Technische Details AOSP32368 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V.
Weitere Produktangebote AOSP32368 nach Preis ab 0.35 EUR bis 0.93 EUR
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AOSP32368 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 16A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
auf Bestellung 6364 Stücke: Lieferzeit 10-14 Tag (e) |
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AOSP32368 | Hersteller : Alpha & Omega Semiconductor |
30V N-Channel MOSFET |
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AOSP32368 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain current: 12A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
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AOSP32368 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain current: 12A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30V |
Produkt ist nicht verfügbar |