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AOSP36326C

AOSP36326C ALPHA & OMEGA SEMICONDUCTOR

AOSP36326C.pdf Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 558 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
268+0.27 EUR
365+0.20 EUR
414+0.17 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 268
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOSP36326C ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 30V 12A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V.

Weitere Produktangebote AOSP36326C nach Preis ab 0.14 EUR bis 1.14 EUR

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AOSP36326C AOSP36326C Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOSP36326C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
268+0.27 EUR
365+0.20 EUR
414+0.17 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 268
Im Einkaufswagen  Stück im Wert von  UAH
AOSP36326C AOSP36326C Hersteller : Alpha & Omega Semiconductor Inc. AOSP36326C.pdf Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
AOSP36326C AOSP36326C Hersteller : Alpha & Omega Semiconductor Inc. AOSP36326C.pdf Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOSP36326C Hersteller : Alpha & Omega Semiconductor aosp36326c.pdf N-Channel MOSFET
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