AOSP36326C ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Gate charge: 15nC
On-state resistance: 11mΩ
Power dissipation: 2.5W
Drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 290+ | 0.25 EUR |
| 394+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 500+ | 0.14 EUR |
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Technische Details AOSP36326C ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 30V 12A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V.
Weitere Produktangebote AOSP36326C nach Preis ab 0.14 EUR bis 1.07 EUR
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AOSP36326C | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SO8 Gate charge: 15nC On-state resistance: 11mΩ Power dissipation: 2.5W Drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar |
auf Bestellung 3120 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSP36326C | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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AOSP36326C | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V |
auf Bestellung 33092 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOSP36326C | Hersteller : Alpha & Omega Semiconductor |
N-Channel MOSFET |
Produkt ist nicht verfügbar |
