AOT10B60D ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1001 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 2.13 EUR |
| 39+ | 1.87 EUR |
| 44+ | 1.63 EUR |
| 47+ | 1.54 EUR |
| 500+ | 1.49 EUR |
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Technische Details AOT10B60D ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 20A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 163 W.
Weitere Produktangebote AOT10B60D nach Preis ab 1.49 EUR bis 2.58 EUR
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AOT10B60D | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Collector-emitter saturation voltage: 1.53V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.26mJ |
auf Bestellung 1001 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT10B60D | Hersteller : ALPHA&OMEGA |
Transistor IGBT; 600V; 20V; 10A; 40A; 163W; 5,6V; 17,4nC; -55°C~175°C; AOT10B60D TAOT10b60d Anzahl je Verpackung: 10 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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AOT10B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT10B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT10B60D | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 20A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W |
Produkt ist nicht verfügbar |