AOT10B60D ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Transistor IGBT; 600V; 20V; 10A; 40A; 163W; 5,6V; 17,4nC; -55°C~175°C; AOT10B60D TAOT10b60d
Anzahl je Verpackung: 10 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.95 EUR |
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7-14 Tag (e)
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13 Stücke
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Technische Details AOT10B60D ALPHA&OMEGA
Description: IGBT 600V 20A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 163 W.
Weitere Produktangebote AOT10B60D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOT10B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO220 Mounting: THT Kind of package: tube Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.53V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.26mJ Gate charge: 17.4nC |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOT10B60D |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 25ns
Turn-off time: 80.8ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
Gate charge: 17.4nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 25ns
Turn-off time: 80.8ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
Gate charge: 17.4nC
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)