AOT15B60D ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Transistor IGBT; 600V; 20V; 30A; 60A; 167W; 5,6V; 25,4nC; -55°C~175°C; AOT15B60D TAOT15b60d
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.25 EUR |
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10 Stücke
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Technische Details AOT15B60D ALPHA&OMEGA
Description: IGBT 600V 30A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 196 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 21ns/73ns, Switching Energy: 420µJ (on), 110µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 25.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 167 W.
Weitere Produktangebote AOT15B60D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOT15B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Power dissipation: 83.3W Case: TO220 Mounting: THT Gate charge: 25.4nC Pulsed collector current: 60A Turn-on time: 40ns Kind of package: tube Turn-off time: 83ns Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.6V Collector current: 15A Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ Collector-emitter voltage: 600V |
auf Bestellung 838 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOT15B60D |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ
Type of transistor: IGBT
Power dissipation: 83.3W
Case: TO220
Mounting: THT
Gate charge: 25.4nC
Pulsed collector current: 60A
Turn-on time: 40ns
Kind of package: tube
Turn-off time: 83ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.6V
Collector current: 15A
Turn-off switching energy: 0.11mJ
Turn-on switching energy: 0.42mJ
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ
Type of transistor: IGBT
Power dissipation: 83.3W
Case: TO220
Mounting: THT
Gate charge: 25.4nC
Pulsed collector current: 60A
Turn-on time: 40ns
Kind of package: tube
Turn-off time: 83ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.6V
Collector current: 15A
Turn-off switching energy: 0.11mJ
Turn-on switching energy: 0.42mJ
Collector-emitter voltage: 600V
auf Bestellung 838 Stücke:
Lieferzeit 14-21 Tag (e)