AOT15B60D ALPHA&OMEGA
Hersteller: ALPHA&OMEGATransistor IGBT; 600V; 20V; 30A; 60A; 167W; 5,6V; 25,4nC; -55°C~175°C; AOT15B60D TAOT15b60d
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 3.44 EUR |
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Technische Details AOT15B60D ALPHA&OMEGA
Description: IGBT 600V 30A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 196 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 21ns/73ns, Switching Energy: 420µJ (on), 110µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 25.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 167 W.
Weitere Produktangebote AOT15B60D
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOT15B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT15B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 30A 167W 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT15B60D | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Case: TO220 Mounting: THT Kind of package: tube Gate charge: 25.4nC Turn-on time: 40ns Turn-off time: 83ns Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ Collector-emitter saturation voltage: 1.6V Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 83.3W Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOT15B60D | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 30A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 21ns/73ns Switching Energy: 420µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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AOT15B60D | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Case: TO220 Mounting: THT Kind of package: tube Gate charge: 25.4nC Turn-on time: 40ns Turn-off time: 83ns Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ Collector-emitter saturation voltage: 1.6V Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 83.3W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |


