Weitere Produktangebote AOT16N50
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOT16N50 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOT16N50 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOT16N50 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of channel: enhancement Drain-source voltage: 500V Drain current: 11A On-state resistance: 370mΩ Power dissipation: 278W Gate charge: 42.8nC Gate-source voltage: ±30V Case: TO220 Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AOT16N50 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V |
Produkt ist nicht verfügbar |
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AOT16N50 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of channel: enhancement Drain-source voltage: 500V Drain current: 11A On-state resistance: 370mΩ Power dissipation: 278W Gate charge: 42.8nC Gate-source voltage: ±30V Case: TO220 |
Produkt ist nicht verfügbar |