AOT1N60 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.9A
Power dissipation: 41.7W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 319 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 125+ | 0.58 EUR |
| 138+ | 0.52 EUR |
| 157+ | 0.46 EUR |
| 250+ | 0.41 EUR |
| 500+ | 0.39 EUR |
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Technische Details AOT1N60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 1.3A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V, Power Dissipation (Max): 41.7W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.
Weitere Produktangebote AOT1N60 nach Preis ab 0.41 EUR bis 1.81 EUR
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AOT1N60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.9A Power dissipation: 41.7W Case: TO220 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhancement |
auf Bestellung 319 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT1N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 1.3A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOT1N60 | Hersteller : ALPHA&OMEGA |
Transistor N-Channel MOSFET; 600V; 30V; 9Ohm; 1,3A; 41,7W; -55°C ~ 150°C; AOT1N60 TAOT1n60 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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