AOT1N60

AOT1N60 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F3554C061F6A50&compId=AOT1N60-DTE.pdf?ci_sign=445bf15263ae3e85d94e852a3de628d198debec1 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.9A
Power dissipation: 41.7W
Case: TO220
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of channel: enhancement
Gate charge: 6.1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 415 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
97+0.74 EUR
115+0.62 EUR
167+0.43 EUR
177+0.40 EUR
1000+0.39 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOT1N60 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 600V 1.3A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V, Power Dissipation (Max): 41.7W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.

Weitere Produktangebote AOT1N60 nach Preis ab 0.40 EUR bis 1.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOT1N60 AOT1N60 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F3554C061F6A50&compId=AOT1N60-DTE.pdf?ci_sign=445bf15263ae3e85d94e852a3de628d198debec1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.9A
Power dissipation: 41.7W
Case: TO220
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of channel: enhancement
Gate charge: 6.1nC
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
115+0.62 EUR
167+0.43 EUR
177+0.40 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
AOT1N60 AOT1N60 Hersteller : Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 600V 1.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
50+0.84 EUR
100+0.74 EUR
500+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
AOT1N60 Hersteller : ALPHA&OMEGA TO220.pdf Transistor N-Channel MOSFET; 600V; 30V; 9Ohm; 1,3A; 41,7W; -55°C ~ 150°C; AOT1N60 TAOT1n60
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+0.82 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH