Technische Details AOT20B65M1 AOS
Description: IGBT 650V 20A TO220, Power - Max: 227 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 40 A, Gate Charge: 46 nC, Test Condition: 400V, 20A, 15Ohm, 15V, Switching Energy: 470µJ (on), 270µJ (off), Td (on/off) @ 25°C: 26ns/122ns, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A, Reverse Recovery Time (trr): 322 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote AOT20B65M1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
AOT20B65M1 | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: IGBT 650V 20A TO220Power - Max: 227 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Gate Charge: 46 nC Test Condition: 400V, 20A, 15Ohm, 15V Switching Energy: 470µJ (on), 270µJ (off) Td (on/off) @ 25°C: 26ns/122ns Supplier Device Package: TO-220 Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Reverse Recovery Time (trr): 322 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |