AOT20B65M1 Alpha & Omega Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 87+ | 1.68 EUR |
| 1000+ | 1.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOT20B65M1 Alpha & Omega Semiconductor
Description: IGBT 650V 20A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 322 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 26ns/122ns, Switching Energy: 470µJ (on), 270µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 46 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 227 W.
Weitere Produktangebote AOT20B65M1 nach Preis ab 1.27 EUR bis 1.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AOT20B65M1 | Hersteller : Alpha & Omega Semiconductor |
 Trans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
AOT20B65M1 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ Case: TO220 Mounting: THT Pulsed collector current: 60A Turn-on time: 51ns Turn-off time: 135ns Type of transistor: IGBT Collector-emitter saturation voltage: 1.7V Power dissipation: 114W Gate-emitter voltage: ±30V Kind of package: tube Gate charge: 46nC Turn-on switching energy: 0.47mJ Turn-off switching energy: 0.27mJ Collector current: 20A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 117 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
AOT20B65M1 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ Case: TO220 Mounting: THT Pulsed collector current: 60A Turn-on time: 51ns Turn-off time: 135ns Type of transistor: IGBT Collector-emitter saturation voltage: 1.7V Power dissipation: 114W Gate-emitter voltage: ±30V Kind of package: tube Gate charge: 46nC Turn-on switching energy: 0.47mJ Turn-off switching energy: 0.27mJ Collector current: 20A Collector-emitter voltage: 650V |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
AOT20B65M1 | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
|
|
AOT20B65M1 | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||
 |
AOT20B65M1 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 322 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 470µJ (on), 270µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 227 W |
Produkt ist nicht verfügbar |