AOT282L

AOT282L ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F3553352864A50&compId=AOT282L-DTE.pdf?ci_sign=336ad93adf0385ed315a0f0fed1d85367408e318 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Power dissipation: 136W
Gate charge: 58nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 480 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.67 EUR
45+1.62 EUR
47+1.53 EUR
100+1.46 EUR
500+1.33 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOT282L ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 80V 18.5A/105A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V.

Weitere Produktangebote AOT282L nach Preis ab 1.46 EUR bis 1.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOT282L AOT282L Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F3553352864A50&compId=AOT282L-DTE.pdf?ci_sign=336ad93adf0385ed315a0f0fed1d85367408e318 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Power dissipation: 136W
Gate charge: 58nC
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
45+1.62 EUR
47+1.53 EUR
100+1.46 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
AOT282L AOT282L Hersteller : Alpha & Omega Semiconductor aob282l.pdf Trans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT282L AOT282L Hersteller : Alpha & Omega Semiconductor Inc. AOT282L.pdf Description: MOSFET N-CH 80V 18.5A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH