AOT410L ALPHA & OMEGA SEMICONDUCTOR


AOT410L-DTE.pdf
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 107nC
Power dissipation: 167W
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+2.96 EUR
32+2.68 EUR
37+2.34 EUR
100+2.13 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOT410L ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 100V 12A/150A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V.

Weitere Produktangebote AOT410L nach Preis ab 2.51 EUR bis 7.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
AOT410L AOT410L ALPHA&OMEGA info-taot410l.pdf Transistor N-Channel MOSFET; 100V; 25V; 11mOhm; 150A; 333W; -55°C ~ 175°C; AOT410L TAOT410l
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.63 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT410L AOT410L Alpha & Omega Semiconductor Inc. AOT410L.pdf Description: MOSFET N-CH 100V 12A/150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.2 EUR
50+3.65 EUR
100+3.31 EUR
500+2.7 EUR
1000+2.51 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT410L info-taot410l.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 25V; 11mOhm; 150A; 333W; -55°C ~ 175°C; AOT410L TAOT410l
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
5+6.63 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT410L AOT410L.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 12A/150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.2 EUR
50+3.65 EUR
100+3.31 EUR
500+2.7 EUR
1000+2.51 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH