AOT410L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 107nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.69 EUR |
| 30+ | 2.42 EUR |
| 37+ | 1.94 EUR |
| 40+ | 1.83 EUR |
| 250+ | 1.79 EUR |
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Technische Details AOT410L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 12A/150A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V.
Weitere Produktangebote AOT410L nach Preis ab 1.79 EUR bis 5.67 EUR
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AOT410L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Power dissipation: 167W Case: TO220 Gate-source voltage: ±25V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 107nC Kind of channel: enhancement |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT410L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 12A/150A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V |
auf Bestellung 916 Stücke: Lieferzeit 10-14 Tag (e) |
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AOT410L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT410L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |