AOT410L

AOT410L ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F3553352904A50&compId=AOT410L-DTE.pdf?ci_sign=73722ab2d2980d6876008ba98c2ddf7f148fd611 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 107nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.69 EUR
30+2.42 EUR
37+1.94 EUR
40+1.83 EUR
250+1.79 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOT410L ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 100V 12A/150A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V.

Weitere Produktangebote AOT410L nach Preis ab 1.79 EUR bis 5.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOT410L AOT410L Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F3553352904A50&compId=AOT410L-DTE.pdf?ci_sign=73722ab2d2980d6876008ba98c2ddf7f148fd611 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 107nC
Kind of channel: enhancement
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
30+2.42 EUR
37+1.94 EUR
40+1.83 EUR
250+1.79 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
AOT410L AOT410L Hersteller : Alpha & Omega Semiconductor Inc. AOT410L.pdf Description: MOSFET N-CH 100V 12A/150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
auf Bestellung 916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
50+2.85 EUR
100+2.58 EUR
500+2.10 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AOT410L AOT410L Hersteller : Alpha & Omega Semiconductor aot410l.pdf Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT410L AOT410L Hersteller : Alpha & Omega Semiconductor 51aot410l.pdf Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH