AOT5B60D

AOT5B60D ALPHA & OMEGA SEMICONDUCTOR


AOT5B60D.pdf Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 41.2W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 95ns
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
Mindestbestellmenge: 59
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Technische Details AOT5B60D ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 600V 10A 82.4W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 12ns/83ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 82.4 W.

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AOT5B60D AOT5B60D Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOT5B60D.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 41.2W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 95ns
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
Mindestbestellmenge: 59
AOT5B60D AOT5B60D Hersteller : Alpha & Omega Semiconductor 37aot5b60d.pdf Trans IGBT Chip N-CH 600V 10A 82400mW 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
AOT5B60D AOT5B60D Hersteller : Alpha & Omega Semiconductor Inc. AOT5B60D.pdf Description: IGBT 600V 10A 82.4W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12ns/83ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 82.4 W
Produkt ist nicht verfügbar