AOT5N100 Alpha & Omega Semiconductor
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.89 EUR |
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Technische Details AOT5N100 Alpha & Omega Semiconductor
Description: MOSFET N-CH 1000V 4A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V.
Weitere Produktangebote AOT5N100 nach Preis ab 0.89 EUR bis 0.89 EUR
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AOT5N100 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT5N100 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT5N100 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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AOT5N100 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2.5A; 195W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.5A Power dissipation: 195W Case: TO220 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AOT5N100 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 1000V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
Produkt ist nicht verfügbar |
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AOT5N100 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2.5A; 195W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.5A Power dissipation: 195W Case: TO220 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |