AOT66811L Alpha & Omega Semiconductor


aot66811l.pdf Hersteller: Alpha & Omega Semiconductor
Medium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOT66811L Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Power Dissipation (Max): 10W (Ta), 310W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V.

Weitere Produktangebote AOT66811L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOT66811L Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOT66811L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 155W; TO220
Mounting: THT
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 155W
Polarisation: unipolar
Kind of package: tube
Gate charge: 77nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Case: TO220
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT66811L AOT66811L Hersteller : Alpha & Omega Semiconductor Inc. AOT66811L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 310W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT66811L Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOT66811L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 155W; TO220
Mounting: THT
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 155W
Polarisation: unipolar
Kind of package: tube
Gate charge: 77nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Case: TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH