AOT66811L Alpha & Omega Semiconductor
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Technische Details AOT66811L Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Power Dissipation (Max): 10W (Ta), 310W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V.
Weitere Produktangebote AOT66811L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| AOT66811L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 155W; TO220 Mounting: THT Drain-source voltage: 80V Drain current: 120A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 155W Polarisation: unipolar Kind of package: tube Gate charge: 77nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 480A Case: TO220 Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AOT66811L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 310W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V |
Produkt ist nicht verfügbar |
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| AOT66811L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 155W; TO220 Mounting: THT Drain-source voltage: 80V Drain current: 120A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 155W Polarisation: unipolar Kind of package: tube Gate charge: 77nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 480A Case: TO220 |
Produkt ist nicht verfügbar |