AOT66916L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.76 EUR |
| 50+ | 4.53 EUR |
| 100+ | 4.12 EUR |
| 500+ | 3.4 EUR |
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Technische Details AOT66916L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO220, Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 277W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.