AOT7S65L

AOT7S65L Alpha & Omega Semiconductor Inc.


TO220.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
auf Bestellung 373 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.73 EUR
50+ 3.8 EUR
100+ 3.13 EUR
Mindestbestellmenge: 6
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Technische Details AOT7S65L Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 650V 7A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V.

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