AOTF10B60D ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ
Mounting: THT
Pulsed collector current: 40A
Turn-on time: 25ns
Turn-off time: 80.8ns
Type of transistor: IGBT
Collector-emitter voltage: 600V
Case: TO220F
Gate-emitter voltage: ±20V
Kind of package: tube
Gate charge: 17.4nC
Turn-on switching energy: 0.35mJ
Turn-off switching energy: 0.16mJ
Power dissipation: 16.7W
Collector-emitter saturation voltage: 1.53V
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 899 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2.02 EUR |
| 40+ | 1.79 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOTF10B60D ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 20A 42W TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 42 W.
Weitere Produktangebote AOTF10B60D nach Preis ab 1.33 EUR bis 2.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AOTF10B60D | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ Mounting: THT Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220F Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 17.4nC Turn-on switching energy: 0.35mJ Turn-off switching energy: 0.16mJ Power dissipation: 16.7W Collector-emitter saturation voltage: 1.53V Collector current: 10A |
auf Bestellung 899 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
AOTF10B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220F |
Produkt ist nicht verfügbar |
|||||||||||
 |
AOTF10B60D | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 20A 42W TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 42 W |
Produkt ist nicht verfügbar |