AOTF10B60D2 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Power dissipation: 12W
Case: TO220F
Mounting: THT
Turn-on time: 26ns
Turn-off time: 124ns
Collector current: 10A
Collector-emitter voltage: 600V
Kind of package: tube
Gate charge: 9.4nC
Collector-emitter saturation voltage: 1.55V
Turn-on switching energy: 0.14mJ
Turn-off switching energy: 0.04mJ
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 242 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 1.50 EUR |
| 53+ | 1.36 EUR |
| 65+ | 1.12 EUR |
| 69+ | 1.04 EUR |
| 1000+ | 1.00 EUR |
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Technische Details AOTF10B60D2 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 23A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 12ns/83ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Part Status: Active, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 31.2 W.
Weitere Produktangebote AOTF10B60D2 nach Preis ab 1.04 EUR bis 1.50 EUR
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AOTF10B60D2 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Power dissipation: 12W Case: TO220F Mounting: THT Turn-on time: 26ns Turn-off time: 124ns Collector current: 10A Collector-emitter voltage: 600V Kind of package: tube Gate charge: 9.4nC Collector-emitter saturation voltage: 1.55V Turn-on switching energy: 0.14mJ Turn-off switching energy: 0.04mJ Pulsed collector current: 20A Gate-emitter voltage: ±20V |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF10B60D2 | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 23A 31200mW 3-Pin(3+Tab) TO-220F T/R |
Produkt ist nicht verfügbar |
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AOTF10B60D2 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 23A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 12ns/83ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 31.2 W |
Produkt ist nicht verfügbar |