Technische Details AOTF11N70 Alpha & Omega Semiconductor
Description: MOSFET N-CH 700V 11A TO220-3F, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote AOTF11N70
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
AOTF11N70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 11A TO220-3FInput Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
AOTF11N70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.87Ω Mounting: THT Kind of channel: enhancement Gate charge: 37.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOTF11N70 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 11A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 700V 11A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOTF11N70 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.87Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 37.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.87Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 37.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH




