Produkte > ALPHA & OMEGA SEMICONDUCTOR > AOTF20B65M1
AOTF20B65M1

AOTF20B65M1 ALPHA & OMEGA SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C1DAADB61820&compId=AOTF20B65M1.pdf?ci_sign=4ead80152a187b7581abb08626ae0dd7a570483a Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Power dissipation: 18W
Kind of package: tube
Gate charge: 46nC
Turn-on switching energy: 0.47mJ
Turn-off switching energy: 0.27mJ
Mounting: THT
Case: TO220F
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.7V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 51ns
Turn-off time: 166ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 596 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.62 EUR
31+2.36 EUR
35+2.06 EUR
37+1.94 EUR
250+1.89 EUR
1000+1.87 EUR
Mindestbestellmenge: 28
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Technische Details AOTF20B65M1 ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 650V 20A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 322 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 26ns/122ns, Switching Energy: 470µJ (on), 270µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 45 W.

Weitere Produktangebote AOTF20B65M1 nach Preis ab 1.66 EUR bis 4.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOTF20B65M1 AOTF20B65M1 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C1DAADB61820&compId=AOTF20B65M1.pdf?ci_sign=4ead80152a187b7581abb08626ae0dd7a570483a Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Power dissipation: 18W
Kind of package: tube
Gate charge: 46nC
Turn-on switching energy: 0.47mJ
Turn-off switching energy: 0.27mJ
Mounting: THT
Case: TO220F
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.7V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 51ns
Turn-off time: 166ns
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
31+2.36 EUR
35+2.06 EUR
37+1.94 EUR
250+1.89 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
AOTF20B65M1 AOTF20B65M1 Hersteller : Alpha & Omega Semiconductor Inc. AOTF20B65M1.pdf Description: IGBT 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 45 W
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.79 EUR
100+2.01 EUR
500+1.66 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
AOTF20B65M1 AOTF20B65M1 Hersteller : Alpha & Omega Semiconductor aotf20b65m1.pdf Trans IGBT Chip N-CH 650V 40A 45000mW 3-Pin(3+Tab) TO-220F Tube
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