AOTF2610L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 15.5W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 15.5W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 8.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 973 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 78+ | 0.92 EUR |
| 81+ | 0.89 EUR |
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Technische Details AOTF2610L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 60V 9A/35A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V.
Weitere Produktangebote AOTF2610L nach Preis ab 0.89 EUR bis 1.03 EUR
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AOTF2610L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 15.5W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 15.5W Case: TO220F Gate-source voltage: ±20V On-state resistance: 10.7mΩ Mounting: THT Kind of channel: enhancement Gate charge: 8.5nC |
auf Bestellung 973 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF2610L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 9A/35A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V |
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