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AOTF286L

AOTF286L Alpha & Omega Semiconductor Inc.

AOTF286L.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 13.5A/56A TO220
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 37.5W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 56A (Tc)
FET Type: N-Channel
auf Bestellung 2220 Stücke:
Lieferzeit 10-14 Tag (e)
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50+2.5 EUR
100+2.25 EUR
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1000+1.68 EUR
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Technische Details AOTF286L Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 80V 13.5A/56A TO220, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 2.2W (Ta), 37.5W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 56A (Tc), FET Type: N-Channel.