AOTF7N65 ALPHA&OMEGA
Hersteller: ALPHA&OMEGATransistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOTF7N65 ALPHA&OMEGA
Description: MOSFET N-CH 650V 7A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V.
Weitere Produktangebote AOTF7N65
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
AOTF7N65 Produktcode: 153855
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller : A&O |
Transistoren > MOSFET N-CHGehäuse: TO-220F Uds,V: 650 V Idd,A: 7 А Rds(on), Ohm: 1,56 Ohm Ciss, pF/Qg, nC: 887/19 JHGF: THT |
Produkt ist nicht verfügbar
|
|
|
|
AOTF7N65 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F |
Produkt ist nicht verfügbar |
|
|
AOTF7N65 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO220-3FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
Produkt ist nicht verfügbar |

