AOTL66610

AOTL66610 Alpha & Omega Semiconductor Inc.


AOTL66610.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 61A/350A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.63 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOTL66610 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 60V 61A/350A TOLLA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 272W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: TOLLA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V.

Weitere Produktangebote AOTL66610 nach Preis ab 3.22 EUR bis 7.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOTL66610 AOTL66610 Hersteller : Alpha & Omega Semiconductor Inc. AOTL66610.pdf Description: MOSFET N-CH 60V 61A/350A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+4.82 EUR
100+3.43 EUR
500+3.22 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AOTL66610 AOTL66610 Hersteller : Alpha & Omega Semiconductor aotl66610.pdf Trans MOSFET N-CH 60V 61A 9-Pin TOLLA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTL66610 AOTL66610 Hersteller : Alpha & Omega Semiconductor aotl66610.pdf Trans MOSFET N-CH 60V 61A 9-Pin TOLLA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTL66610 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOTL66610.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 61A; 8.3W; TOLLA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TOLLA
Polarisation: unipolar
Gate charge: 145nC
On-state resistance: 1.2mΩ
Power dissipation: 8.3W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 61A
Technology: AlphaSGT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH