AOU2N60 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 9.5nC
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 153+ | 0.56 EUR |
| 178+ | 0.48 EUR |
| 191+ | 0.44 EUR |
| 480+ | 0.4 EUR |
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Technische Details AOU2N60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 2A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-251-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 56.8W (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote AOU2N60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOU2N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 2A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-251-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOU2N60 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 2A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-251-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 2A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-251-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH