AOWF412 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 16W; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Case: TO262F
Gate-source voltage: ±25V
On-state resistance: 15.6mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhancement
Power dissipation: 16W
Anzahl je Verpackung: 1000 Stücke
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Technische Details AOWF412 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 7.8A/30A, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-262F, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V.
Weitere Produktangebote AOWF412
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AOWF412 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 7.8A/30A Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-262F Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V |
Produkt ist nicht verfügbar |
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| AOWF412 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 16W; TO262F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Case: TO262F Gate-source voltage: ±25V On-state resistance: 15.6mΩ Mounting: THT Gate charge: 45nC Kind of channel: enhancement Power dissipation: 16W |
Produkt ist nicht verfügbar |