Weitere Produktangebote AOY2610E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AOY2610E | ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251B; ESD Kind of channel: enhancement Version: ESD Mounting: THT Type of transistor: N-MOSFET Case: TO251B Gate charge: 14.5nC On-state resistance: 9.5mΩ Gate-source voltage: ±20V Power dissipation: 23.5W Drain current: 36.5A Drain-source voltage: 60V Polarisation: unipolar |
auf Bestellung 1698 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOY2610E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251B; ESD
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Case: TO251B
Gate charge: 14.5nC
On-state resistance: 9.5mΩ
Gate-source voltage: ±20V
Power dissipation: 23.5W
Drain current: 36.5A
Drain-source voltage: 60V
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251B; ESD
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Case: TO251B
Gate charge: 14.5nC
On-state resistance: 9.5mΩ
Gate-source voltage: ±20V
Power dissipation: 23.5W
Drain current: 36.5A
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1698 Stücke:
Lieferzeit 14-21 Tag (e)