AOY2610E ALPHA & OMEGA SEMICONDUCTOR
auf Bestellung 952 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 1.00 EUR |
| 140+ | 0.51 EUR |
| 148+ | 0.48 EUR |
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Technische Details AOY2610E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CHANNEL 60V 19A TO251B, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 59.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-251B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
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AOY2610E Produktcode: 198546
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 Transistoren > MOSFET N-CH |
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AOY2610E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 46A 3-Pin(3+Tab) TO-251B Tube |
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| AOY2610E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 60V 19A TO251B Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251B Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
Produkt ist nicht verfügbar |