AOY2610E

AOY2610E ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C29C52D33820&compId=AOY2610E.pdf?ci_sign=1efb32937b90c811caebc5b98f1c407310b30154 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251; ESD
Mounting: THT
Case: TO251
Drain-source voltage: 60V
Drain current: 36.5A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 23.5W
Polarisation: unipolar
Version: ESD
Gate charge: 14.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 385 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.94 EUR
112+0.64 EUR
140+0.51 EUR
148+0.48 EUR
490+0.47 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOY2610E ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CHANNEL 60V 19A TO251B, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 59.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-251B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.

Weitere Produktangebote AOY2610E nach Preis ab 0.48 EUR bis 0.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOY2610E AOY2610E Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C29C52D33820&compId=AOY2610E.pdf?ci_sign=1efb32937b90c811caebc5b98f1c407310b30154 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251; ESD
Mounting: THT
Case: TO251
Drain-source voltage: 60V
Drain current: 36.5A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 23.5W
Polarisation: unipolar
Version: ESD
Gate charge: 14.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
112+0.64 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
AOY2610E
Produktcode: 198546
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AOY2610E.pdf Transistoren > MOSFET N-CH
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AOY2610E AOY2610E Hersteller : Alpha & Omega Semiconductor aoi2610e.pdf Trans MOSFET N-CH 60V 46A 3-Pin(3+Tab) TO-251B Tube
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AOY2610E Hersteller : Alpha & Omega Semiconductor Inc. AOY2610E.pdf Description: MOSFET N-CHANNEL 60V 19A TO251B
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH