
AOY2610E ALPHA & OMEGA SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251; ESD
Mounting: THT
Case: TO251
Drain-source voltage: 60V
Drain current: 36.5A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 23.5W
Polarisation: unipolar
Version: ESD
Gate charge: 14.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 385 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
112+ | 0.64 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
490+ | 0.47 EUR |
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Technische Details AOY2610E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CHANNEL 60V 19A TO251B, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 59.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-251B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Weitere Produktangebote AOY2610E nach Preis ab 0.48 EUR bis 0.94 EUR
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AOY2610E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251; ESD Mounting: THT Case: TO251 Drain-source voltage: 60V Drain current: 36.5A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Power dissipation: 23.5W Polarisation: unipolar Version: ESD Gate charge: 14.5nC Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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AOY2610E Produktcode: 198546
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AOY2610E | Hersteller : Alpha & Omega Semiconductor |
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AOY2610E | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251B Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
Produkt ist nicht verfügbar |