Technische Details AOY2N60 Alpha & Omega Semiconductor Inc.
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 57W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 1.4A, Power dissipation: 57W, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 4.7Ω, Mounting: THT, Gate charge: 6.5nC, Kind of channel: enhancement.
Weitere Produktangebote AOY2N60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AOY2N60 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 57W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: THT Gate charge: 6.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOY2N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 57W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 6.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 57W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 6.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH