Produkte > ALPHA & OMEGA SEMICONDUCTOR INC. > AOY66923
AOY66923

AOY66923 Alpha & Omega Semiconductor Inc.

AOY66923.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5/58A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 5373 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
70+1.45 EUR
140+1.31 EUR
560+1.07 EUR
1050+0.99 EUR
2030+0.92 EUR
5040+0.83 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOY66923 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 100V 16.5/58A TO251B, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251B, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 73W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.