APT10035B2FLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT10035B2FLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX, Case: TO247MAX, Mounting: THT, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 112A, Drain-source voltage: 1kV, Drain current: 28A, On-state resistance: 370mΩ, Type of transistor: N-MOSFET, Power dissipation: 690W, Polarisation: unipolar, Gate charge: 186nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10035B2FLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
APT10035B2FLLG | Hersteller : Microchip Technology |
 MOSFET FG, FREDFET,1000V, TO-247 T-MAX, RoHS |
Produkt ist nicht verfügbar |
|
| APT10035B2FLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC |
Produkt ist nicht verfügbar |