APT100GN60B2G Microchip Technology
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Technische Details APT100GN60B2G Microchip Technology
Description: IGBT TRENCH FIELD STOP 600V 229A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/310ns, Switching Energy: 4.7mJ (on), 2.675mJ (off), Test Condition: 400V, 100A, 1Ohm, 15V, Gate Charge: 600 nC, Current - Collector (Ic) (Max): 229 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 625 W.
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APT100GN60B2G | Hersteller : Microchip Technology |
 Description: IGBT TRENCH FIELD STOP 600V 229APackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/310ns Switching Energy: 4.7mJ (on), 2.675mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 600 nC Current - Collector (Ic) (Max): 229 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 625 W |
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| APT100GN60B2G | Hersteller : Microchip Technology |
IGBTs IGBT Fieldstop Low Frequency Single 600 V 100 A TO-247 MAX |
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APT100GN60B2G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 135A; 625W; T-Max Collector current: 135A Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 300A Technology: Field Stop Turn-off time: 435ns Mounting: THT Kind of package: tube Turn-on time: 96ns Type of transistor: IGBT Gate charge: 600nC Collector-emitter voltage: 600V Power dissipation: 625W |
Produkt ist nicht verfügbar |