APT100GN60B2G Microchip / Microsemi
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details APT100GN60B2G Microchip / Microsemi
Description: IGBT TRENCH FIELD STOP 600V 229A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/310ns, Switching Energy: 4.7mJ (on), 2.675mJ (off), Test Condition: 400V, 100A, 1Ohm, 15V, Gate Charge: 600 nC, Current - Collector (Ic) (Max): 229 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 625 W.
Weitere Produktangebote APT100GN60B2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT100GN60B2G | Hersteller : MICROCHIP TECHNOLOGY |
 APT100GN60B2G THT IGBT transistors |
Produkt ist nicht verfügbar |
||
 |
APT100GN60B2G | Hersteller : Microchip Technology |
Description: IGBT TRENCH FIELD STOP 600V 229A Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/310ns Switching Energy: 4.7mJ (on), 2.675mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 600 nC Current - Collector (Ic) (Max): 229 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 625 W |
Produkt ist nicht verfügbar |