APT100GT120JRDQ4 Microchip Technology
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 101.18 EUR |
| 100+ | 87.37 EUR |
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Technische Details APT100GT120JRDQ4 Microchip Technology
Description: IGBT MOD 1200V 123A 570W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: NPT, Current - Collector (Ic) (Max): 123 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 570 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 7.85 nF @ 25 V.
Weitere Produktangebote APT100GT120JRDQ4 nach Preis ab 103.21 EUR bis 103.21 EUR
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APT100GT120JRDQ4 | Hersteller : Microchip Technology |
 Description: IGBT MOD 1200V 123A 570W ISOTOPPackaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Current - Collector (Ic) (Max): 123 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 570 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 7.85 nF @ 25 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT120JRDQ4 | Hersteller : Microchip / Microsemi |
IGBT Modules FG, IGBT-COMBI,1200V,100A, SOT-227 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT120JRDQ4 | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V 123A 570000mW 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT100GT120JRDQ4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT100GT120JRDQ4 | Hersteller : MICROSEMI |
SOT227/INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY COMBI APT100GT120 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT100GT120JRDQ4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw |
Produkt ist nicht verfügbar |