APT100GT60B2RG Microsemi
Hersteller: Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Technische Details APT100GT60B2RG Microsemi
Description: IGBT NPT 600V 148A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A, IGBT Type: NPT, Td (on/off) @ 25°C: 40ns/320ns, Switching Energy: 3.25mJ (on), 3.125mJ (off), Test Condition: 400V, 100A, 4.3Ohm, 15V, Gate Charge: 460 nC, Current - Collector (Ic) (Max): 148 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 500 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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APT100GT60B2RG | Microchip Technology |
Description: IGBT NPT 600V 148APackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A IGBT Type: NPT Td (on/off) @ 25°C: 40ns/320ns Switching Energy: 3.25mJ (on), 3.125mJ (off) Test Condition: 400V, 100A, 4.3Ohm, 15V Gate Charge: 460 nC Current - Collector (Ic) (Max): 148 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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| APT100GT60B2RG |
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Hersteller: Microchip Technology
Description: IGBT NPT 600V 148A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.25mJ (on), 3.125mJ (off)
Test Condition: 400V, 100A, 4.3Ohm, 15V
Gate Charge: 460 nC
Current - Collector (Ic) (Max): 148 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT NPT 600V 148A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.25mJ (on), 3.125mJ (off)
Test Condition: 400V, 100A, 4.3Ohm, 15V
Gate Charge: 460 nC
Current - Collector (Ic) (Max): 148 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
