Technische Details APT100M50J MICROSEMI
Description: MOSFET N-CH 500V 103A SOT227, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 5V @ 5mA, Power Dissipation (Max): 960W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), FET Type: N-Channel, Packaging: Tube, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote APT100M50J
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT100M50J | Microchip Technology |
 Description: MOSFET N-CH 500V 103A SOT227Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) FET Type: N-Channel Packaging: Tube Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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APT100M50J | Microchip / Microsemi |
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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APT100M50J | Microchip Technology |
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT100M50J |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 103A SOT227
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 500V 103A SOT227
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT100M50J |
|
Hersteller: Microchip / Microsemi
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT100M50J |
|
Hersteller: Microchip Technology
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH