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APT11GF120BRDQ1G

APT11GF120BRDQ1G Microsemi Corporation

APT11GF120BRDQ1_G_.pdf Hersteller: Microsemi Corporation
Description: IGBT NPT 1200V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 7ns/100ns
Switching Energy: 300µJ (on), 285µJ (off)
Test Condition: 800V, 8A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 156 W
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Technische Details APT11GF120BRDQ1G Microsemi Corporation

Description: IGBT NPT 1200V 25A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 7ns/100ns, Switching Energy: 300µJ (on), 285µJ (off), Test Condition: 800V, 8A, 10Ohm, 15V, Gate Charge: 65 nC, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 156 W.