APT1201R5BVRG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Case: TO247-3
On-state resistance: 1.5Ω
Technology: POWER MOS 5®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Case: TO247-3
On-state resistance: 1.5Ω
Technology: POWER MOS 5®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
Anzahl je Verpackung: 1 Stücke
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Technische Details APT1201R5BVRG MICROCHIP TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3, Drain-source voltage: 1.2kV, Drain current: 10A, Case: TO247-3, On-state resistance: 1.5Ω, Technology: POWER MOS 5®, Kind of package: tube, Mounting: THT, Type of transistor: N-MOSFET, Kind of channel: enhancement, Polarisation: unipolar, Gate charge: 28nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R5BVRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT1201R5BVRG | Hersteller : Microchip Technology |
 MOSFET MOSFET MOS5 1200 V 1.5 Ohm TO-247 |
Produkt ist nicht verfügbar |
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APT1201R5BVRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 Drain-source voltage: 1.2kV Drain current: 10A Case: TO247-3 On-state resistance: 1.5Ω Technology: POWER MOS 5® Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 28nC |
Produkt ist nicht verfügbar |