APT12067LFLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264
On-state resistance: 670mΩ
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Mounting: THT
Gate charge: 150nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Anzahl je Verpackung: 1 Stücke
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Technische Details APT12067LFLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1200V 18A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V.
Weitere Produktangebote APT12067LFLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT12067LFLLG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1.2KV 18A 3-Pin(3+Tab) TO-264 Tube |
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APT12067LFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 18A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT12067LFLLG | Hersteller : Microsemi |
MOSFET Power FREDFET - MOS7 |
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APT12067LFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264 On-state resistance: 670mΩ Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Mounting: THT Gate charge: 150nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264 Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A |
Produkt ist nicht verfügbar |