APT13GP120BDQ1G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 20A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 21ns
Turn-off time: 270ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 11.97 EUR |
| 10+ | 10.42 EUR |
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Technische Details APT13GP120BDQ1G MICROCHIP TECHNOLOGY
Description: IGBT PT 1200V 41A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 9ns/28ns, Switching Energy: 115µJ (on), 165µJ (off), Test Condition: 600V, 13A, 5Ohm, 15V, Gate Charge: 55 nC, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 250 W.
Weitere Produktangebote APT13GP120BDQ1G nach Preis ab 9.1 EUR bis 11.97 EUR
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APT13GP120BDQ1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 20A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 55nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 21ns Turn-off time: 270ns |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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| APT13GP120BDQ1G | Hersteller : Microchip Technology |
IGBTs IGBT PT MOS 7 Combi 1200 V 13 A TO-247 |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT13GP120BDQ1G | Hersteller : Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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APT13GP120BDQ1G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 41A 250W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT13GP120BDQ1G | Hersteller : Microchip Technology |
Description: IGBT PT 1200V 41A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 9ns/28ns Switching Energy: 115µJ (on), 165µJ (off) Test Condition: 600V, 13A, 5Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 50 A Power - Max: 250 W |
Produkt ist nicht verfügbar |