Technische Details APT14F100S Microsemi
Description: MOSFET N-CH 1000V 14A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V.
Weitere Produktangebote APT14F100S
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APT14F100S | Hersteller : MICROCHIP (MICROSEMI) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 980mΩ Gate-source voltage: ±30V Pulsed drain current: 56A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT14F100S | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT14F100S | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 1000V, TO-268 |
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APT14F100S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 980mΩ Gate-source voltage: ±30V Pulsed drain current: 56A |
Produkt ist nicht verfügbar |