APT14M120B Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.04 EUR |
| 100+ | 11.41 EUR |
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Technische Details APT14M120B Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V.
Weitere Produktangebote APT14M120B nach Preis ab 12.46 EUR bis 14.43 EUR
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APT14M120B | Hersteller : Microchip Technology |
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APT14M120B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Power dissipation: 625W Polarisation: unipolar Kind of package: tube Mounting: THT Gate charge: 145nC Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 51A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 9A On-state resistance: 1.1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT14M120B | Hersteller : MICROSEMI |
TO-247 [B] Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT14M120B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Power dissipation: 625W Polarisation: unipolar Kind of package: tube Mounting: THT Gate charge: 145nC Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 51A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 9A On-state resistance: 1.1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |