auf Bestellung 64 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.18 EUR |
| 100+ | 20.88 EUR |
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Technische Details APT14M120B Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V.
Weitere Produktangebote APT14M120B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APT14M120B | Hersteller : Microsemi |
 MOSFET Power MOSFET - MOS8 |
auf Bestellung 51 Stücke: Lieferzeit 14-28 Tag (e) |
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APT14M120B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT14M120B | Hersteller : MICROSEMI |
TO-247 [B] Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT14M120B | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT14M120B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A |
Produkt ist nicht verfügbar |