Technische Details APT17F100B Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3, Type of transistor: N-MOSFET, Mounting: THT, Case: TO247-3, On-state resistance: 780mΩ, Technology: POWER MOS 8®, Power dissipation: 625W, Polarisation: unipolar, Gate charge: 150nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 70A, Drain-source voltage: 1kV, Drain current: 11A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT17F100B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT17F100B | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 1000V 17A TO247 |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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APT17F100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT17F100B | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 1000V, TO-247 |
Produkt ist nicht verfügbar |
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APT17F100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A |
Produkt ist nicht verfügbar |