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Technische Details APT17F80S Microsemi
Description: MOSFET N-CH 800V 18A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote APT17F80S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT17F80S | Microchip Technology |
 Description: MOSFET N-CH 800V 18A D3PAKInput Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
APT17F80S | Microchip Technology |
MOSFETs FREDFET MOS8 800 V 17 A TO-268 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT17F80S |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 18A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 800V 18A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 70 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT17F80S |
|
Hersteller: Microchip Technology
MOSFETs FREDFET MOS8 800 V 17 A TO-268
MOSFETs FREDFET MOS8 800 V 17 A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH