APT20GT60BRG Microsemi

IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Technische Details APT20GT60BRG Microsemi
Description: IGBT NPT 600V 43A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 8ns/80ns, Switching Energy: 215µJ (on), 245µJ (off), Test Condition: 400V, 20A, 5Ohm, 15V, Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 174 W.
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APT20GT60BRG | Hersteller : Microchip Technology |
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APT20GT60BRG | Hersteller : MICROSEMI |
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APT20GT60BRG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 8ns/80ns Switching Energy: 215µJ (on), 245µJ (off) Test Condition: 400V, 20A, 5Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 174 W |
Produkt ist nicht verfügbar |