APT20M11JVFR Microchip Technology
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 124.17 EUR |
| 100+ | 107.22 EUR |
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Technische Details APT20M11JVFR Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A, Technology: POWER MOS 5®, Case: ISOTOP, Electrical mounting: screw, Mechanical mounting: screw, Kind of package: tube, Polarisation: unipolar, Kind of channel: enhancement, Semiconductor structure: single transistor, On-state resistance: 11mΩ, Type of semiconductor module: MOSFET transistor, Drain current: 175A, Gate-source voltage: ±30V, Drain-source voltage: 200V, Pulsed drain current: 700A, Power dissipation: 700W, Anzahl je Verpackung: 1 Stücke.
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APT20M11JVFR | Hersteller : Microsemi |
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auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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APT20M11JVFR | Hersteller : Microchip Technology |
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APT20M11JVFR | Hersteller : Microchip Technology |
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| APT20M11JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Technology: POWER MOS 5® Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Semiconductor structure: single transistor On-state resistance: 11mΩ Type of semiconductor module: MOSFET transistor Drain current: 175A Gate-source voltage: ±30V Drain-source voltage: 200V Pulsed drain current: 700A Power dissipation: 700W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT20M11JVFR | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 200V 175A SOT-227 |
Produkt ist nicht verfügbar |
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| APT20M11JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Technology: POWER MOS 5® Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Semiconductor structure: single transistor On-state resistance: 11mΩ Type of semiconductor module: MOSFET transistor Drain current: 175A Gate-source voltage: ±30V Drain-source voltage: 200V Pulsed drain current: 700A Power dissipation: 700W |
Produkt ist nicht verfügbar |