APT20M18B2VRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details APT20M18B2VRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 625W, Case: TO247MAX, Gate-source voltage: ±30V, On-state resistance: 18mΩ, Mounting: THT, Gate charge: 330nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT20M18B2VRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT20M18B2VRG | Hersteller : Microsemi | MOSFET Power MOSFET - MOS5 |
Produkt ist nicht verfügbar |
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| APT20M18B2VRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |