APT20M18B2VRG Microchip Technology
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Technische Details APT20M18B2VRG Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V.
Weitere Produktangebote APT20M18B2VRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT20M18B2VRG | Hersteller : MICROCHIP TECHNOLOGY |
 APT20M18B2VRG THT N channel transistors |
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APT20M18B2VRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 200V 100A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT20M18B2VRG | Hersteller : Microsemi |
MOSFET Power MOSFET - MOS5 |
Produkt ist nicht verfügbar |