APT20M18B2VRG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT20M18B2VRG Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V.
Weitere Produktangebote APT20M18B2VRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT20M18B2VRG | Hersteller : Microsemi |
MOSFET Power MOSFET - MOS5 |
Produkt ist nicht verfügbar |