APT20M22LVRG Microchip Technology
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.32 EUR |
| 100+ | 28.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT20M22LVRG Microchip Technology
Description: MOSFET N-CH 200V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V.
Weitere Produktangebote APT20M22LVRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
APT20M22LVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
|
 |
APT20M22LVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
|
| APT20M22LVRG | Hersteller : MICROCHIP TECHNOLOGY |
APT20M22LVRG THT N channel transistors |
Produkt ist nicht verfügbar |
||
| APT20M22LVRG | Hersteller : MICROSEMI |
TO-264 [L] Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
APT20M22LVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 200V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V |
Produkt ist nicht verfügbar |