Technische Details APT20M22LVRG Microchip Technology
Description: MOSFET N-CH 200V 100A TO264, Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 [L], Vgs(th) (Max) @ Id: 4V @ 2.5mA, Power Dissipation (Max): 520W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Weitere Produktangebote APT20M22LVRG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT20M22LVRG | Microchip Technology |
 Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT20M22LVRG | MICROSEMI |
TO-264 [L] Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
APT20M22LVRG | Microchip Technology |
Description: MOSFET N-CH 200V 100A TO264 Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 4V @ 2.5mA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT20M22LVRG |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT20M22LVRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 200V 100A TO264
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH