APT20M38BVRG Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 67A TO247
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 370W (Tc)
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Technische Details APT20M38BVRG Microchip Technology
Description: MOSFET N-CH 200V 67A TO247, Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 370W (Tc).
Weitere Produktangebote APT20M38BVRG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
APT20M38BVRG | Microchip / Microsemi |
MOSFET FG, MOSFET, 200V, TO-247, RoHS |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT20M38BVRG |
|
Hersteller: Microchip / Microsemi
MOSFET FG, MOSFET, 200V, TO-247, RoHS
MOSFET FG, MOSFET, 200V, TO-247, RoHS
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)