APT20M38BVRG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.60 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT20M38BVRG Microchip Technology
Description: MOSFET N-CH 200V 67A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V.
Weitere Produktangebote APT20M38BVRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
APT20M38BVRG | Hersteller : Microchip / Microsemi |
MOSFET FG, MOSFET, 200V, TO-247, RoHS |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
APT20M38BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|
 |
APT20M38BVRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Pulsed drain current: 268A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| APT20M38BVRG | Hersteller : MICROSEMI |
TO247-3/MOSFET N-CH 200V 67A APT20M38 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
|
APT20M38BVRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Pulsed drain current: 268A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |