APT20M38BVRG

APT20M38BVRG Microchip Technology


5960-apt20m38bvr-datasheet Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
auf Bestellung 42 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details APT20M38BVRG Microchip Technology

Description: MOSFET N-CH 200V 67A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V.

Weitere Produktangebote APT20M38BVRG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
APT20M38BVRG APT20M38BVRG Hersteller : Microchip / Microsemi APT20M38BVR_D-1593370.pdf MOSFET FG, MOSFET, 200V, TO-247, RoHS
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
APT20M38BVRG APT20M38BVRG Hersteller : Microchip Technology 20m38bvr.pdf Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT20M38BVRG APT20M38BVRG Hersteller : MICROCHIP TECHNOLOGY 5960-apt20m38bvr-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT20M38BVRG Hersteller : MICROSEMI 5960-apt20m38bvr-datasheet TO247-3/MOSFET N-CH 200V 67A APT20M38
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT20M38BVRG APT20M38BVRG Hersteller : MICROCHIP TECHNOLOGY 5960-apt20m38bvr-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH